Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
There is a lot of interest in the WBG technologies such as SiC and GaN and the purpose here is to show that both Si and WBG materials (SiC and GaN) all have their place within the power industry and ...
SK keyfoundry, an 8-inch pure-play foundry in Korea, has recently completed the development of its SiC planar MOSFET process platform. The company also revealed that it has secured an order for the ...
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