Six kilowatts in a 60 by 60 millimeter by 11 millimeter high solution, which translates into about 2.5 kilowatts per cubic ...

Since mass-production of the SiC MOSFET commenced in 2010, portfolios have expanded, often through the introduction of ...

At APEC 2026, iDEAL Semiconductor drew attention with a silicon-based alternative to GaN and SiC, showcasing an expansion of ...

Successfully develops SiC Planar MOSFET process platform for 450V–2300V, securing high reliability and yield competitiveness Accelerates SiC-based compound semiconductor foundry business by initiating ...

The MarketWatch News Department was not involved in the creation of this content. ALBANY, N.Y., Feb. 25, 2026 /PRNewswire/ -- NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power ...

Navitas Semiconductor (NVTS) expects Q4 revenue of $7M, down 61% year-over-year. Navitas is intentionally exiting low-margin mobile charger business. Management calls Q4 the revenue bottom with ...

With the proliferation of generative AI (GenAI) models, data centers are under pressure to deliver unprecedented computational power, energy efficiency, and thermal management. AI data center market ...

Navitas Semiconductor has announced its 5th-generation GeneSiC platform featuring high-voltage trench-assisted planar (TAP) SiC MOSFETs, describing it as a significant advancement over previous ...

Part 2 of this series discusses recent innovations and product launches in 2025 from leading SiC device manufacturers, providing an up-to-date perspective on state-of-the-art SiC. The SiC MOSFET ...

Relative dielectric constant ε Pure number 11.8 9.7/10.2 SiC achieves lower on-resistance than silicon because its higher breakdown electric field enables a much thinner, more heavily doped drift ...

As utility-scale solar projects accelerate the transition to 2kV system architectures, the industry is increasingly focused on whether higher voltage can deliver real-world cost reductions and ...