Microchip’s DualPack 3 (DP3) IGBT7 power modules come in six variants at 1200 V and 1700 V with current ratings from 300 A to 900 A. They reduce power losses by 15% to 20% compared to IGBT4 devices ...

The race for compact, efficient, and reliable power electronics is accelerating—and Microchip is responding with a new lineup of DualPack 3 (DP3) IGBT7 modules that aim to simplify design while ...

The seventh generation of IGBT power modules are now available in seven packages across multiple parts. These devices feature lower VCE (sat) and VF, overload capacity at TJ of 175°C, 50% higher ...

Abstract: IGBT (Insulated Gate Bipolar Transistor) is the key device of servo drive. IGBT type selection and losses is directly related to the system performance, cost, and size. As the latest ...

IGBT modules improve efficiency in diverse applications through a versatile housing design and simplified paralleling, providing cost-effective solutions. The shift towards offloading complexity to ...

Infineon Technologies has introduced a 62mm half-bridge and common emitter module portfolio with 1200 V TRENCHSTOP IGBT7 chips. The wide range of offerings in the proven 62mm housing is extended with ...

The 1,200 V TRENCHSTOP IGBT7 chip has significantly lower static losses compared to the modules with the IGBT4 chipset, resulting in significant loss reduction in applications. The 62 mm module family ...

The addition to the portfolio’s current classes provides system designers with a high degree of flexibility in designing higher current power solutions while offering higher power density and ...

Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...

Infineon Technologies AG uses the advanced neutral-point-clamped (ANPC) topology for its hybrid silicon-carbide (SiC) and IGBT power module EasyPACK 2B in the 1200-V family. Optimizing for sweet-spot ...